• DocumentCode
    1461451
  • Title

    New developments in silicon photovoltaic devices

  • Author

    Prince, M.B. ; Wolf, M.

  • Author_Institution
    Hoffman Electronics Corporation, Semiconductor Division, Evanston, USA
  • Volume
    18
  • Issue
    10
  • fYear
    1958
  • fDate
    10/1/1958 12:00:00 AM
  • Firstpage
    583
  • Lastpage
    594
  • Abstract
    The requirements which silicon photovoltaic devices have to meet in various applications are so widely different that it was necessary to develop three distinct types of devices: (1) A device which is operated in the forward biased condition, useful at moderately low to high light levels, known as a solar cell. (2) A device which is operated in the forward biased condition, useful at very low light levels, known as a low level cell. (3) A device operated in the reverse biased direction at low to high light levels, known as a photodiode. All three types are p-n junction devices, prepared by solid state diffusion methods, with each type designed to yield special characteristics. The spectral response, transient response, and temperature dependence of these devices are considered.
  • Keywords
    photoelectric cells; semiconductor devices;
  • fLanguage
    English
  • Journal_Title
    Radio Engineers, Journal of the British Institution of
  • Publisher
    iet
  • Type

    jour

  • DOI
    10.1049/jbire.1958.0062
  • Filename
    5259436