DocumentCode
1461451
Title
New developments in silicon photovoltaic devices
Author
Prince, M.B. ; Wolf, M.
Author_Institution
Hoffman Electronics Corporation, Semiconductor Division, Evanston, USA
Volume
18
Issue
10
fYear
1958
fDate
10/1/1958 12:00:00 AM
Firstpage
583
Lastpage
594
Abstract
The requirements which silicon photovoltaic devices have to meet in various applications are so widely different that it was necessary to develop three distinct types of devices: (1) A device which is operated in the forward biased condition, useful at moderately low to high light levels, known as a solar cell. (2) A device which is operated in the forward biased condition, useful at very low light levels, known as a low level cell. (3) A device operated in the reverse biased direction at low to high light levels, known as a photodiode. All three types are p-n junction devices, prepared by solid state diffusion methods, with each type designed to yield special characteristics. The spectral response, transient response, and temperature dependence of these devices are considered.
Keywords
photoelectric cells; semiconductor devices;
fLanguage
English
Journal_Title
Radio Engineers, Journal of the British Institution of
Publisher
iet
Type
jour
DOI
10.1049/jbire.1958.0062
Filename
5259436
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