• DocumentCode
    1462361
  • Title

    Proposal for a new room temperature X-ray detector-thallium lead iodide

  • Author

    Kocsis, M.

  • Author_Institution
    Eur. Synchrotron Radiat. Facility, Grenoble, France
  • Volume
    47
  • Issue
    6
  • fYear
    2000
  • fDate
    12/1/2000 12:00:00 AM
  • Firstpage
    1945
  • Lastpage
    1947
  • Abstract
    Numerous compounds have been considered for room temperature semiconductor detector applications. Most of them however are difficult to obtain as crystals and to handle. TlPbI3 is a promising candidate, because it forms rhombohedral crystals which do not have a structural phase transition between room temperature and their melting point. Its low vapour pressure facilitates the crystal growth and it has a low melting point (619 K), high Z, high density (6.6 g/cm3), and a bandgap of 2.3 eV. X-ray photoconductivity measurements indicate that this material can be used in room temperature solid state detectors
  • Keywords
    X-ray detection; photoconductivity; semiconductor counters; TlPbI3; TlPbI3 detector; X-ray detector; X-ray photoconductivity; bandgap; crystal growth; density; melting point; room temperature semiconductor detector; vapour pressure; Crystalline materials; Crystals; Photoconducting materials; Photoconductivity; Photonic band gap; Proposals; Solid state circuits; Temperature; X-ray detection; X-ray detectors;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.914475
  • Filename
    914475
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1462361