• DocumentCode
    1462656
  • Title

    Electrical Behavior of Phase-Change Memory Cells Based on GeTe

  • Author

    Perniola, Luca ; Sousa, Veronique ; Fantini, Andrea ; Arbaoui, Edrisse ; Bastard, Audrey ; Armand, Marilyn ; Fargeix, Alain ; Jahan, Carine ; Nodin, Jean-François ; Persico, Alain ; Blachier, Denis ; Toffoli, Alain ; Loubriat, Sebastien ; Gourvest, Emanue

  • Author_Institution
    MINATEC, CEA-LETI, Grenoble, France
  • Volume
    31
  • Issue
    5
  • fYear
    2010
  • fDate
    5/1/2010 12:00:00 AM
  • Firstpage
    488
  • Lastpage
    490
  • Abstract
    In this letter, we present a study on the electrical behavior of phase-change memories (PCMs) based on a GeTe active material. GeTe PCMs show, first, extremely rapid SET operation (yielding a gain of more than one decade in energy per bit with respect to standard GST PCMs), second, robust cycling, up to 1 ?? 105, with 30-ns SET and RESET stress time, and third, a better retention behavior at high temperature with respect to GST PCMs. These results, obtained on single cells, suggest GeTe as a promising alternative material to standard GST to improve PCM performance and reliability.
  • Keywords
    germanium compounds; phase change memories; GeTe; SET operation; active material; electrical behavior; phase-change memory cells; retention behavior; Chalcogenide; GeTe; germanium; nonvolatile memories; phase-change (PC) memories (PCMs); telluride;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2010.2044136
  • Filename
    5443508
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1462656