Record power-added-efficiency, low-voltage GOI (GaAs on insulator) MESFET technology for wireless applications

Author

Parikh, Primit ; Ibbetson, James ; Mishra, Umesh ; Docter, Daniel ; Le, Minh ; Kiziloglu, Kürsad ; Grider, David ; Pusl, Joe ; Widman, Duncan ; Kehias, Lois ; Jenkins, Thomas

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

46

Issue

12

fYear

1998

fDate

12/1/1998 12:00:00 AM

Firstpage

2202

Lastpage

2207

Abstract

A record-high power-added efficiency (PAE) is obtained from a GaAs on insulator (GOI) MESFET. Al₂O₃ obtained by the wet oxidation of Al_0.98GaAs in steam is used as the insulating buffer layer. The insulating buffer results in elimination of buffer leakage and enhanced charge control. 0.35-μm gate-length GOI MESFETs exhibiting a record PAE of 72% at a drain voltage of 3 V at 4 GHz are demonstrated

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; low-power electronics; microwave field effect transistors; microwave power transistors; oxidation; power MESFET; semiconductor-insulator boundaries; 0.35 micron; 3 V; 4 GHz; 72 percent; GaAs on insulator; GaAs-Al₂O₃; insulating buffer layer; low-voltage GOI MESFET; power-added-efficiency; wet oxidation; wireless technology; Buffer layers; Cable insulation; Etching; Gallium arsenide; Linearity; MESFETs; Oxidation; Power amplifiers; Power generation; Space technology;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.739197

Filename

739197