DocumentCode
1462793
Title
Comments on “Effective Modulation of Ni Silicide Schottky Barrier Height Using Chlorine Ion Implantation and Segregation”
Author
Connelly, Daniel ; Clifton, Paul
Author_Institution
Acorn Technol., Palo Alto, CA, USA
Volume
31
Issue
5
fYear
2010
fDate
5/1/2010 12:00:00 AM
Firstpage
417
Lastpage
418
Abstract
Data claimed to support a barrier height between Cl-implanted Ni-Si and Si of as low as 0.08 V are consistent with much higher barrier heights when the effects of series resistance and junction nonideality are considered. Using smaller contacts would provide increased sensitivity to the Schottky barrier heights between the metal and the silicon substrate.
Keywords
Schottky barriers; chlorine; ion implantation; semiconductor-metal boundaries; silicon compounds; Ni silicide Schottky barrier height; chlorine ion implantation; chlorine ion segregation; junction nonideality; metal; modulation; series resistance; silicon substrate; MOS devices; Schottky barriers; semiconductor device modeling; semiconductor–metal interfaces; silicon;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2010.2044360
Filename
5443529
Link To Document