DocumentCode
1462807
Title
Enhanced Carrier-Mobility-Fluctuation Origin Low-Frequency Noise in Uniaxial Strained PMOSFETs
Author
Kuo, Jack J -Y ; Chen, William P -N ; Su, Pin
Author_Institution
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume
31
Issue
5
fYear
2010
fDate
5/1/2010 12:00:00 AM
Firstpage
497
Lastpage
499
Abstract
This letter reports our new findings on the impact of uniaxial strain on the low-frequency-noise characteristics in nanoscale PMOSFETs. It is found that the normalized drain current noise of the strained device in the high-gate-overdrive (V gst) regime is larger than its control counterpart. In addition, the enhanced carrier-mobility-fluctuation origin 1/f noise for the strained device in the high-|V gst| regime indicates that the carrier mobility in the strained device is more phonon limited, which represents an intrinsic strain effect on the low-frequency noise.
Keywords
1/f noise; MOSFET; carrier mobility; nanoelectronics; 1/f noise; carrier-mobility-fluctuation origin low-frequency noise; high-gate-overdrive regime; nanoscale PMOSFET; normalized drain current noise; strain effect; strained device; uniaxial strained PMOSFET; Carrier mobility fluctuation; low-frequency noise; process-induced strain; uniaxial strained PMOSFET;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2010.2044138
Filename
5443530
Link To Document