DocumentCode
1463538
Title
Effect of SiGe channel on pFET variability in 32 nm technology
Author
Yuan, Xibo ; Zhang, Qi ; Tran, Hung ; Fox, S. ; Sherony, M.
Author_Institution
IBM Microelectron. Div., Int. Semicond. Dev. Alliance, Hopewell Junction, NY, USA
Volume
48
Issue
5
fYear
2012
Firstpage
273
Lastpage
274
Abstract
The effect of a silicon germanium (SiGe) channel on pFET threshold voltage (VTH) mismatch in 32 nm high-K/metal-gate (HKMG) process is characterised. Additional variability is observed in the SiGe-channel pFET as compared with the traditional pFET with a silicon (Si) channel. Despite the extra VTH mismatch introduced by the SiGe channel, the traditional mismatch figure of merit from a Pelgrom plot (AVT) continuously scales down as technology advances from poly/SiON to HKMG process.
Keywords
Ge-Si alloys; field effect transistors; high-k dielectric thin films; semiconductor materials; HKMG process; Pelgrom plot; SiGe; high-K-metal-gate process; pFET threshold voltage mismatch; pFET variability; polysilicon oxinitride; silicon germanium channel; size 32 nm;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2011.3830
Filename
6164322
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