• DocumentCode
    1463842
  • Title

    Power Amplifier for 77-GHz Automotive Radar in 90-nm LP CMOS Technology

  • Author

    Lin, Jau-Jr ; To, Kun-Hin ; Hammock, Donna ; Knappenberger, Bill ; Majerus, Michael ; Huang, W. Margaret

  • Author_Institution
    RF, Analog & Sensor Group, Freescale Semicond. Inc., Tempe, AZ, USA
  • Volume
    20
  • Issue
    5
  • fYear
    2010
  • fDate
    5/1/2010 12:00:00 AM
  • Firstpage
    292
  • Lastpage
    294
  • Abstract
    This letter reports power amplifiers for 77-GHz automotive radar applications in a 90-nm LP (low power) 1P6M CMOS technology. The three-stage single-ended PA has a 12.4 dB gain and a +9.1-dBm saturated output power and the two-stage differential PA has a 11.3 dB gain and a +11.4-dBm output power at Pin = 1.9 dBm. This is the first letter to report CMOS PA characteristics over full automotive temperature range (-40??C to 125??C) at 77 GHz range.
  • Keywords
    CMOS integrated circuits; automotive electronics; low-power electronics; millimetre wave amplifiers; millimetre wave radar; automotive radar; frequency 77 GHz; gain 11.3 dB; gain 12.4 dB; low power 1P6M CMOS technology; power amplifier; size 90 nm; temperature -40 C to 125 C; CMOS; RADAR; millimeter-wave; power amplifier;
  • fLanguage
    English
  • Journal_Title
    Microwave and Wireless Components Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1531-1309
  • Type

    jour

  • DOI
    10.1109/LMWC.2010.2045598
  • Filename
    5443684
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1463842