Enhanced Electro-Optic Phase Modulation in InGaAs Quantum Posts at 1500 nm

Author

Shin, JaeHyuk ; Kim, Hyochul ; Petroff, Pierre M. ; Dagli, Nadir

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA

Volume

46

Issue

7

fYear

2010

fDate

7/1/2010 12:00:00 AM

Firstpage

1127

Lastpage

1131

Abstract

Electro-optic properties of self assembled InGaAs quantum posts have been studied experimentally. For TE polarization phase modulation enhancement up to 27% over devices containing InGaAs quantum well of the same average composition and thickness was observed indicating significant electro-optic coefficient increase in quantum posts. The measured linear and quadratic electro-optic coefficients of the quantum posts were as high as 17.8 Ã— 10^-12 m/V and 49.4 Ã— 10^-21 m²/V² at 1500 nm which are more than an order of magnitude larger than those of GaAs.

Keywords

III-V semiconductors; electro-optical modulation; gallium arsenide; indium compounds; optical waveguides; phase modulation; self-assembly; semiconductor quantum wells; InGaAs; electro-optic phase modulation; optical waveguides; phase modulation enhancement; quantum wells; self-assembled quantum posts; wavelength 1500 nm; Gallium arsenide; Indium gallium arsenide; Lithium niobate; Optical materials; Optical modulation; Optical waveguide components; Optical waveguides; Phase modulation; Quantum dots; Semiconductor waveguides; Optical waveguide components; phase modulation; quantum dots; semiconductor waveguides;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2010.2044975

Filename

5443688