Integrated sensor and electronic circuits in fully depleted SOI technology for high-temperature applications

Author

Demeûs, Laurent ; Dessard, Vincent ; Viviani, Alberto ; Adriaensen, Stéphane ; Flandre, Denis

Author_Institution

CISSOID S.A., Louvain-la-Nueve, Belgium

Volume

48

Issue

2

fYear

2001

fDate

4/1/2001 12:00:00 AM

Firstpage

272

Lastpage

280

Abstract

The electrical characteristics of devices and circuits realized in CMOS technology on silicon-on-insulator (SOI) substrates and operated at elevated temperatures are presented and compared with results obtained using other materials (bulk Si, GaAs, SiC). It is demonstrated that fully depleted CMOS on SOI is the most suitable process for the realization of complex electronic circuits to be operated in high-temperature environments, up to more than 300°C

Keywords

CMOS integrated circuits; electric sensing devices; high-temperature electronics; semiconductor thin films; silicon-on-insulator; substrates; CMOS technology; GaAs; Si; SiC; bulk Si; electronic circuits; elevated temperatures; fully depleted SOI technology; high-temperature applications; high-temperature environments; silicon-on-insulator substrates; CMOS process; CMOS technology; Electric variables; Electronic circuits; Gallium arsenide; Integrated circuit technology; Sensor phenomena and characterization; Silicon carbide; Silicon on insulator technology; Temperature sensors;

fLanguage

English

Journal_Title

Industrial Electronics, IEEE Transactions on

Publisher

ieee

ISSN

0278-0046

Type

jour

DOI

10.1109/41.915405

Filename

915405