• DocumentCode
    1464075
  • Title

    Low-frequency noise in AlGaN-GaN doped-channel heterostructure field effect transistors grown on insulating SiC substrates

  • Author

    Kuksenkov, D.V. ; Giudice, G.E. ; Temkin, H. ; Gaska, R. ; Ping, A. ; Adesida, I.

  • Author_Institution
    Dept. of Electr. Eng., Texas Tech. Univ., Lubbock, TX, USA
  • Volume
    34
  • Issue
    23
  • fYear
    1998
  • fDate
    11/12/1998 12:00:00 AM
  • Firstpage
    2274
  • Lastpage
    2276
  • Abstract
    The authors report low-frequency noise measurements of doped-channel AlGaN-GaN heterostructure field-effect transistors grown on insulating silicon carbide substrates. In the frequency range 1 Hz-100 kHz the observed noise is of the 1/f type, and the estimated value of the Hooge constant αH is ~10-3
  • Keywords
    1/f noise; III-V semiconductors; aluminium compounds; gallium compounds; high-temperature electronics; power field effect transistors; semiconductor device noise; silicon compounds; 1 Hz to 100 kHz; 1/f type; AlGaN-GaN; Hooge constant; LF noise measurements; SiC; doped-channel HFET; heterostructure field effect transistors; insulating SiC substrates; low-frequency noise;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19981588
  • Filename
    739665
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1464075