Striped-channel InAlAs/InGaAs HEMTs with shallow-grating structures

Author

Kwon, Youngwoo ; Pavlidis, Dimitris ; Hein, Kevin ; Brock, Tim

Author_Institution

Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA

Volume

43

Issue

12

fYear

1996

fDate

12/1/1996 12:00:00 AM

Firstpage

2046

Lastpage

2052

Abstract

Striped-channel (SC) InAlAs/InGaAs HEMTs have been demonstrated with shallow gratings. The shallow grating structure keeps the gate from touching the channel layer and thus solves the gate leakage problem observed in the deep grating devices on InP substrates. Various channel widths have been realized to study the impact of the channel width on the dc and microwave performance. Due to the enhanced charge control in the SC HEMTs, enhanced transconductance/source-drain current (G_m/I_ds) and transconductance/output conductance (G_m/G_ds) were observed. Compared with conventional HEMTs, the SC HEMTs showed degraded f_T due to additional parasitic capacitances and improved f_max due to better carrier confinement

Keywords

III-V semiconductors; aluminium compounds; carrier mobility; characteristics measurement; high electron mobility transistors; indium compounds; leakage currents; microwave field effect transistors; III-V semiconductors; InAlAs-InGaAs; carrier confinement; channel widths; enhanced charge control; gate leakage problem; microwave performance; parasitic capacitances; shallow-grating structures; striped-channel HEMTs; transconductance/output conductance; transconductance/source-drain current; Degradation; Gate leakage; Gratings; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Microwave devices; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.544373

Filename

544373