Simulation of Quantum Current Oscillations in Trigate SOI MOSFETs

Author

Akhavan, Nima Dehdashti ; Afzalian, Aryan ; Lee, Chi-Woo ; Yan, Ran ; Ferain, I. ; Razavi, Pedram ; Fagas, Giorgos ; Colinge, Jean-Pierre

Author_Institution

Tyndall Nat. Inst., Univ. Coll. Cork, Cork, Ireland

Volume

57

Issue

5

fYear

2010

fDate

5/1/2010 12:00:00 AM

Firstpage

1102

Lastpage

1109

Abstract

In this paper, we simulate quantum transport in trigate silicon-on-insulator (SOI) nanowire field-effect transistors using 3-D numerical simulations. The formation of 1-D subbands in SOI nanowire, which results in the oscillation of the current and transconductance characteristic at low temperatures, has been studied in detail. These oscillations correspond to the filling of energy subbands by electrons as the gate voltage is increased, thereby enabling the experimental evaluation of the subband energy spacing in nanowire structures (subband spectroscopy).

Keywords

MOSFET; numerical analysis; silicon-on-insulator; 3D numerical simulations; nanowire field-effect transistors; nanowire structures; quantum current oscillations; silicon-on-insulator; subband spectroscopy; trigate SOI MOSFET; Electrons; FETs; Filling; MOSFETs; Nanostructures; Numerical simulation; Silicon on insulator technology; Temperature; Transconductance; Voltage; 1-D quantum transport; 3-D simulation; Current oscillation; low temperature; multiple-gate MOSFET; nanowire; numerical device modeling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2010.2044295

Filename

5443756