• DocumentCode
    1464370
  • Title

    Characteristics of silicon n+-n--n+ diode with sub-micrometer n - region

  • Author

    Nishizawa, Jun-ichi ; Takeda, Nobuo ; Masuoka, Fujio

  • Author_Institution
    Tohoku Univ., Sendai, Japan
  • Volume
    43
  • Issue
    12
  • fYear
    1996
  • fDate
    12/1/1996 12:00:00 AM
  • Firstpage
    2068
  • Lastpage
    2073
  • Abstract
    In this paper, the I-V characteristics of silicon n+-n --n+ diode are investigated as a parameter of the length of the n- region. This diode with shorter n- region than 1 μm has the ohmic characteristics until reaching high electric field in spite of the existence of numerous space-charges in the n- region, for the first time in this report. This conductance of the diode is inversely proportional to the third power of the length of the n- region. The experimental results are in good agreement with an analytical calculation including the diffusion term of carriers injected from the n+ regions to the n- region. However, the diode with longer n- region than 2 μm shows the space-charge-limited conduction which is the same as earlier reports
  • Keywords
    characteristics measurement; elemental semiconductors; semiconductor device models; semiconductor diodes; silicon; I-V characteristics; Si; diffusion term; n+-n--n+ diode; ohmic characteristics; space-charge-limited conduction; space-charges; sub-micrometer n- region; Communication system control; Diodes; Electrons; Gallium arsenide; Germanium; Proximity effect; Scattering; Semiconductor diodes; Silicon; Solids; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.544376
  • Filename
    544376
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1464370