Equivalent circuit parameters of resonant tunneling diodes extracted from self-consistent Wigner-Poisson simulation

Author

Zhao, Peiji ; Cui, Hong Liang ; Woolard, Dwight L. ; Jensen, Kevin L. ; Buot, F.A.

Author_Institution

Dept. of Phys. & Eng. Phys., Stevens Inst. of Technol., Hoboken, NJ, USA

Volume

48

Issue

4

fYear

2001

fDate

4/1/2001 12:00:00 AM

Firstpage

614

Lastpage

627

Abstract

The equivalent circuit parameters of resonant tunneling diodes (RTD) are extracted from numerical simulation results for RTDs. The RTD models used in this paper are double barrier structures. The influence of the resonant tunneling structure (RTS) parameters, such as the height of barriers, the width of the quantum well, the width of the spacers, and the width of the barriers, on the device parameters are systematically discussed. The effects of device temperature on device parameters are also discussed. Scattering between electrons and phonons greatly affects device parameters and thereby the function of the RTDs. Physical explanations about how the structure parameters and device temperature influence the device parameters are provided. Based on the analysis results, a general way to get an RTD oscillator with a higher maximum frequency is suggested

Keywords

Poisson distribution; Wigner distribution; equivalent circuits; resonant tunnelling diodes; semiconductor device models; semiconductor quantum wells; barrier height; device parameters; device temperature; double barrier structures; equivalent circuit parameters; maximum frequency; numerical simulation results; quantum well width; resonant tunneling diodes; self-consistent Wigner-Poisson simulation; spacer width; Diodes; Electrons; Equivalent circuits; Numerical simulation; Oscillators; Particle scattering; Phonons; Resonant tunneling devices; Scattering parameters; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.915658

Filename

915658