GaAs MOSFETs fabrication with a selective liquid phase oxidized gate

Author

Wu, Jau-Yi ; Wang, Hwei-Heng ; Wang, Yeong-Her ; Houng, Mau-Phon

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

48

Issue

4

fYear

2001

fDate

4/1/2001 12:00:00 AM

Firstpage

634

Lastpage

637

Abstract

The N-channel depletion-mode GaAs MOSFETs with a liquid phase chemical enhanced selective gate oxide grown at low temperature are demonstrated. The proposed selective oxidation method makes the fabrication process of GaAs MOSFETs more reliable and self side-wall passivation possible. The fabricated GaAs MOSFETs exhibit current-voltage characteristics with complete pinch-off and saturation characteristics. The 2 μm gate-length MOSFETs with a gate oxide thickness of 35 nm show transconductance larger than 80 mS/mm and maximum drain current density of 380 mA/mm. In addition, microwave characteristics with f_T of 1.8 GHz and f_max of 5.2 GHz have been achieved from the 3 μm×60 μm GaAs MOSFETs

Keywords

III-V semiconductors; MOSFET; characteristics measurement; current density; gallium arsenide; microwave field effect transistors; oxidation; passivation; semiconductor device measurement; 1.8 GHz; 2 micron; 3 micron; 35 nm; 5.2 GHz; 60 micron; GaAs; N-channel depletion-mode MOSFETs; current-voltage characteristics; drain current density; gate oxide thickness; liquid phase chemical enhanced selective gate oxide; microwave characteristics; pinch-off characteristics; saturation characteristics; selective liquid phase oxidized gate; self side-wall passivation; transconductance; Chemicals; Current density; Current-voltage characteristics; Fabrication; Gallium arsenide; MOSFETs; Oxidation; Passivation; Temperature; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.915668

Filename

915668