• DocumentCode
    1464950
  • Title

    Monte Carlo simulation of high field transport and impact ionization in GaAs p+in+ diodes

  • Author

    Dunn, G.M. ; Rees, G.J. ; David, J.P.R. ; Plimmer, S.A. ; Herbert, D.C.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
  • Volume
    43
  • Issue
    12
  • fYear
    1996
  • fDate
    12/1/1996 12:00:00 AM
  • Firstpage
    2303
  • Lastpage
    2305
  • Abstract
    Two Monte Carlo models, one using realistic band structure, the other an analytical approximation, have been applied to the study of impact ionization in bulk GaAs and short p+in+ diodes. The results were compared with experiment. It was found that the faster, simpler analytical model provided an excellent description of the particle dynamics agreeing extremely well both with experiment and the more sophisticated model
  • Keywords
    III-V semiconductors; Monte Carlo methods; band structure; gallium arsenide; high field effects; impact ionisation; p-i-n diodes; semiconductor device models; GaAs; GaAs p+in+ diodes; Monte Carlo simulation; analytical approximation; analytical model; band structure; bulk GaAs; high field transport; impact ionization; particle dynamics; Analytical models; Diodes; Electrons; Gallium arsenide; Hydrodynamics; Impact ionization; Light emitting diodes; Monte Carlo methods; Neodymium; Numerical models; Scattering;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.544426
  • Filename
    544426
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1464950