Using porous silicon as semi-insulating substrate for β-SiC high temperature optical-sensing devices

Author

Hsieh, W.T. ; Fang, Y.K. ; Wu, K.H. ; Lee, W.J. ; Ho, J.-J. ; Ho, C.W.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

48

Issue

4

fYear

2001

fDate

4/1/2001 12:00:00 AM

Firstpage

801

Lastpage

803

Abstract

This work demonstrates the availability of using porous silicon as semi-insulating substrate for β-SiC high temperature optical sensing devices. An MSM structure was fabricated both on a porous silicon substrate and a conventional silicon substrate, respectively. Experimental results show the optical current ratio can be improved up to 400% at room temperature and 3000% at 200°C operating temperature, respectively, with the porous silicon substrate

Keywords

elemental semiconductors; high-temperature electronics; integrated optoelectronics; metal-semiconductor-metal structures; optical sensors; photoconducting devices; photodetectors; silicon; silicon compounds; substrates; wide band gap semiconductors; β-SiC high temperature optical-sensing devices; 200 C; MSM structure fabrication; OEIC; Si; SiC; porous Si substrate; semi-insulating substrate; Etching; Gallium arsenide; Leakage current; Optical devices; Optical films; Optical sensors; Optoelectronic devices; Silicon; Substrates; Temperature sensors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.915729

Filename

915729