DocumentCode
1465900
Title
Delay Estimation on Single-Electron Tunneling-Based Logic Gates
Author
Chen, Chunhong
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Windsor, Windsor, ON, Canada
Volume
10
Issue
6
fYear
2011
Firstpage
1254
Lastpage
1263
Abstract
The switching speed of single-electron tunneling (SET) logic devices is determined by their delay which, with the stochastic nature of electron transports, is still not well understood and characterized so far. This study looks at unique SET phenomena in SET logic gates and, for the first time, presents several approaches to estimate their delay, including an exact method and two approximate methods (namely, step estimation and fast estimation). Both theoretical analysis and application are shown to support the effectiveness of the proposed method, which also allow us to further explore the impacts of device parameters on the dynamic behavior of SET logic circuits.
Keywords
approximation theory; delay estimation; error statistics; logic circuits; logic gates; single electron devices; tunnelling; approximate methods; delay estimation; device parameters; dynamic behavior; electron transports; exact method; single-electron tunneling logic circuits; single-electron tunneling phenomena; single-electron tunneling-based logic gates; stochastic nature; switching speed; Delay estimation; Error probability; Junctions; Logic gates; Tunneling; Delay estimation; error probability; logic gates; multiple tunnel events; single-electron tunneling (SET) devices; tunnel rates;
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2011.2120617
Filename
5724304
Link To Document