A Novel 1T-1D DRAM Cell for Embedded Application

Author

Cao, Cheng-Wei ; Zang, Song-Gan ; Lin, Xi ; Sun, Qing-Qing ; Xing, Charles ; Wang, Peng-Fei ; Zhang, David Wei

Author_Institution

Dept. of Microelectron., Fudan Univ., Shanghai, China

Volume

59

Issue

5

fYear

2012

fDate

5/1/2012 12:00:00 AM

Firstpage

1304

Lastpage

1310

Abstract

A novel one transistor and one diode (1T-1D) dynamic random access memory cell for embedded applications is proposed. This memory cell consists of a floating-gate (FG) MOSFET and a gated diode. The anode of the diode is connected to the FG, so that the threshold voltage of the FG MOSFET can be modulated by the current through the diode. In this paper, basic device operations, speed, retention, and disturb performance are investigated using Silvaco technology computer-aided design simulation tools. The process compatibility is also investigated by integrating the memory array and specific sense amplifier.

Keywords

DRAM chips; MOSFET; 1T-1D DRAM cell; FG MOSFET; Silvaco technology computer-aided design simulation tools; embedded application; floating-gate MOSFET; memory array; one transistor-one diode dynamic random access memory cell; sense amplifier; Capacitors; Electric potential; Logic gates; MOS devices; MOSFET circuits; Random access memory; Transistors; 1T-1D; embedded dynamic random access memory (DRAM); system-on-chip; tunneling field-effect transistor (TFET);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2012.2187060

Filename

6166398