• DocumentCode
    1466410
  • Title

    Guest Editorial Special Section on the Advanced Semiconductor Manufacturing Conference

  • Author

    Eisenbraun, Eric ; Kahlen, F. ; Werbaneth, Paul ; Pandit, Vinayaka

  • Author_Institution
    Coll. of Nanoscale Sci. & Eng., State Univ. of New York at Albany, Albany, NY, USA
  • Volume
    24
  • Issue
    2
  • fYear
    2011
  • fDate
    5/1/2011 12:00:00 AM
  • Firstpage
    137
  • Lastpage
    138
  • Abstract
    This special section of the IEEE TRANSACTIONS ON Semiconductor Manufacturing (TSM) provides a wider dissemination of selected material presented at the 2010 ASMC to the semiconductor manufacturing community. One paper discusses the structural and electrical characterization of ALD-deposited high-k films. Defects are studied in three papers from different perspectives; one focuses on a library of different types of defects, the second studies failure rate estimation of each process layer using critical area analysis and failing bit results, while the third reduces the electrostatically adhered particles on wafer backside by using ionizers. Lithography applications are discussed in one paper, where bright field defect inspection is employed for process window centering at the 22 nm node, and in another where topcoat-less resists are evaluated for high volume immersion lithography. One paper details the neural networks for advanced process control while another investigates yield improvement using a scalable parametric measurement macro. Finally, rule induction for identifying multilayer tool commonalities is evaluated.
  • Keywords
    electrostatics; high-k dielectric thin films; immersion lithography; inspection; photolithography; photoresists; semiconductor device manufacture; ALD-deposited high-k films; advanced process control; advanced semiconductor manufacturing conference; critical area analysis; electrostatical adhered particles; failure rate estimation; field defect inspection; ionizers; lithography; neural networks; process window centering; scalable parametric measurement macro; size 22 nm; topcoat-less resists; volume immersion lithography; wafer backside; Business; Cities and towns; Educational institutions; Manufacturing processes; Materials; Meetings; Special issues and sections;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/TSM.2011.2123230
  • Filename
    5725196