• DocumentCode
    1466860
  • Title

    Effect of Kinematic Parameters and Their Coupling Relationships on Global Uniformity of Chemical-Mechanical Polishing

  • Author

    Zhao, Dewen ; He, Yongyong ; Wang, Tongqing ; Lu, Xinchun

  • Author_Institution
    Tsinghua Univ., Beijing, China
  • Volume
    25
  • Issue
    3
  • fYear
    2012
  • Firstpage
    502
  • Lastpage
    510
  • Abstract
    In this paper, the kinematic analysis and numerical calculation are used to discuss the effect of the kinematic parameters on the final polishing result of typical rotary chemical-mechanical polishing (CMP) equipment. The relative velocity distribution and the sliding distance distribution are calculated based on the kinematic analysis. Especially, the coupling relationships between the kinematic parameters are investigated and discussed. And two parameters of the sliding distance nonuniformity (SDNU) and the sliding distance nonuniformity within concentric circles (SDNU-cc) are proposed and calculated to evaluate the global uniformity of the sliding distance and to reveal the coupling relationships between the kinematic parameters. The results suggest that the relative velocity distribution and the sliding distance distribution are significantly affected by the coupling effects of the basic motions of CMP system; the SDNU is mainly affected by parameter α, which represents the coupling relationship between the rotary motions of the wafer carrier and the polishing platen; the SDNU-cc is mainly affected by parameter k´T0(αkT0), which represents the coupling relationship between the reciprocating motion and the rotary motion of the wafer carrier; α ≈ 1 and αkT0 >; 2 are proper for better polishing uniformity in real CMP process.
  • Keywords
    chemical mechanical polishing; joining processes; kinematics; CMP equipment; SDNU-cc; concentric circles; coupling relationships; global uniformity; kinematic parameters; polishing platen; reciprocating motion; relative velocity distribution; rotary motions; sliding distance distribution; sliding distance nonuniformity; typical rotary chemical-mechanical polishing; wafer carrier; Chemicals; Couplings; Kinematics; Slurries; Surface treatment; Velocity control; Chemical-mechanical polishing (CMP); coupling relationship; kinematic analysis; nonuniformity; sliding distance;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/TSM.2012.2190432
  • Filename
    6166899