Temperature dependence of current gain of GaInP/GaAs heterojunction and heterostructure-emitter bipolar transistors

Author

Yang, Edward S. ; Yue-Fei Yang ; Hsu, Chung-Chi ; Ou, Hai-Jiang ; Lo, H.B.

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong

Volume

46

Issue

2

fYear

1999

fDate

2/1/1999 12:00:00 AM

Firstpage

320

Lastpage

323

Abstract

The temperature effect on current gain is presented for GaInP/GaAs heterojunction and heterostructure-emitter bipolar transistors (HBTs and HEBTs). Experimental results showed that the current gain of the HEBT increases with the increase of temperature in the temperature range of 25-125°C and decreases slightly at temperatures above 150°C. The smaller the collector current, the larger is the positive differential temperature coefficient. At high current levels, the current gain dependence on temperature is significantly reduced. On the other hand, a large negative coefficient is observed in the HBT in all current range. This finding indicates that the HEBT is a better candidate than the HBT for power devices

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; 25 to 150 C; GaInP-GaAs; HBT; HEBT; current gain; heterojunction bipolar transistor; heterostructure emitter bipolar transistor; power device; temperature dependence; Bipolar transistors; Degradation; Gallium arsenide; Heterojunction bipolar transistors; Proximity effect; Temperature control; Temperature dependence; Temperature distribution; Temperature sensors; Thermionic emission;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.740896

Filename

740896