Alpha-particle-induced collected charge model in SOI-DRAM´s

Author

Satoh, Shigeo ; Tosaka, Yoshiharu ; Suzuki, Kunihiro ; Itakura, Toru

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

Volume

46

Issue

2

fYear

1999

fDate

2/1/1999 12:00:00 AM

Firstpage

388

Lastpage

395

Abstract

We have developed a model for collected charges induced by an alpha-particle for SOI-DRAMs which assumes that the body capacitance equals the gate capacitance and that holes do not recombine with electrons. The validity of our model was supported by three-dimensional (3-D) device simulations that considered various gate lengths, gate oxide thicknesses, and flat-band voltages. The work function difference between the gate and body materials caused a significant increase in the current gain. The vertical band of the body region should therefore be flat to suppress the collected charge. A thinner gate oxide would also suppress the collected charge during a refresh interval. This finding could not be obtained from the conventional equation

Keywords

DRAM chips; alpha-particle effects; capacitance; circuit simulation; integrated circuit modelling; silicon-on-insulator; 3D device simulations; SOI-DRAM; alpha-particle-induced collected charge model; body capacitance; current gain; flat-band voltages; gate capacitance; gate lengths; gate oxide thicknesses; refresh interval; work function difference; Bipolar transistors; Body regions; Capacitance; Charge carrier processes; Electrons; Equations; Impurities; MOSFET circuits; Spontaneous emission; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.740907

Filename

740907