DocumentCode
1467017
Title
EOS/ESD reliability of partially depleted SOI technology
Author
Raha, P. ; Diaz, Carlos ; Rosenbaum, E. ; Cao, M. ; VandeVoorde, P. ; Greene, W.
Author_Institution
IC Bus. Div., Hewlett-Packard Co., Palo Alto, CA, USA
Volume
46
Issue
2
fYear
1999
fDate
2/1/1999 12:00:00 AM
Firstpage
429
Lastpage
431
Abstract
A model for predicting the electrostatic discharge (ESD) protection level of PD-SOI MOSFETs and diodes is presented along with data to support the model. The form of the model is compatible with circuit simulators. An important design rule for layout of multifinger SOI ESD protection MOSFETs has been derived from the model. We present experimental data to support this design rule
Keywords
MOSFET; electrostatic discharge; protection; semiconductor device models; semiconductor device reliability; semiconductor diodes; silicon-on-insulator; EOS; ESD protection; MOSFET; analytical model; circuit simulator; design rule; diode; electrical overstress; electrostatic discharge; layout; partially depleted SOI technology; reliability; Earth Observing System; Electrostatic discharge; MOSFET circuits; Predictive models; Protection; Semiconductor diodes; Solid state circuits; Space vector pulse width modulation; Thermal stresses; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.740912
Filename
740912
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