Field-dependent electron mobility in silicon between 8 and 77 K-a semi-empirical model

The development of a semi-empirical model that predicts the electron mobility in silicon as a function of the electric field in the ⟨100⟩ direction, the doping density, and the temperature for the temperature range 8 to 77 K is discussed. The approach integrates the empirical formulas relating drift velocity and mobility to electric field, developed by Caughey and Thomas, the experimental data obtained by Canali et al., for hyperpure silicon at low temperatures, the theory of scattering rate scaling proposed by Thornber, and the simulation of electron transport via the Monte Carlo method. Figures showing the resulting electron drift velocity under various conditions of doping and temperature are included