Si:SiGe MODFET current mirror

Author

Fobelets, K. ; Jeamsaksiri, Wutthinan ; Hampson, J. ; Toumazou, Christofer ; Thornton, T.

Author_Institution

Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci., Technol. & Med., London

Volume

34

Issue

22

fYear

1998

fDate

10/29/1998 12:00:00 AM

Firstpage

2076

Lastpage

2077

Abstract

Measurements of the DC characteristics of a negative inverting, voltage-following current mirror are presented. The circuit design uses prototype n-depletion mode, modulation doped field effect transistors employing Si:SiGe heterojunction technology and is based on recently established circuit design techniques for GaAs MESFET technology. The results show a quasi-linear response with gate voltage swings (V_gs) of ±0.5 V. Increases in the achievable range of V_gs are anticipated through changes in material growth and device processing, and also through enhancement of the circuit design

Keywords

Ge-Si alloys; current mirrors; elemental semiconductors; high electron mobility transistors; semiconductor materials; silicon; DC characteristics; MODFET; Si-SiGe; Si:SiGe heterojunction technology; circuit design; device processing; gate voltage swing; material growth; n-depletion mode modulation doped field effect transistor; negative inverting voltage following current mirror; quasi-linear response;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19981494

Filename

741291