DocumentCode
1467636
Title
Pseudomorphic InxGa1-xAs/In0.52Al 0.48As modulation doped heterostructures grown by LP-MOVPE
Author
Yavich, B. ; Souza, P.L.
Volume
34
Issue
22
fYear
1998
fDate
10/29/1998 12:00:00 AM
Firstpage
2173
Lastpage
2174
Abstract
The authors have studied the transport properties of pseudomorphic InxGa1-xAs/ln0.52Al0.48As modulation doped heterostructures by Shubnikov-de Haas and Hall measurements. The heterostructures were grown on semi-insulating InP substrates by low pressure metal organic vapour phase epitaxy. The In content of the InxGa1-xAs quantum well layers varied from lattice matched with x=0.53 to pseudomorphic heterostructures with x=0.8. Record values of the mobility by sheet carrier concentration product were obtained. For x=0.6, This was 4.79×101625.87×1016/V.s at 300 and 77 K, respectively. These are the largest values published so far
Keywords
Hall effect; III-V semiconductors; Shubnikov-de Haas effect; aluminium compounds; carrier density; carrier mobility; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; semiconductor quantum wells; vapour phase epitaxial growth; Hall effect; InGaAs-In0.52Al0.48As; LP-MOVPE; Shubnikov-de Haas effect; carrier concentration; carrier mobility; lattice matched growth; low pressure metal organic vapour phase epitaxy; pseudomorphic modulation doped heterostructure; quantum well; semi-insulating InP substrate; transport properties;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19981251
Filename
741391
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