Large on/off current ratio and low leakage current poly-Si TFTs with multichannel structure

Author

Unagami, Takashi ; Kogure, Osamu

Author_Institution

NTT Electr. Commun. Labs., Tokyo, Japan

Volume

35

Issue

11

fYear

1988

fDate

11/1/1988 12:00:00 AM

Firstpage

1986

Lastpage

1989

Abstract

High-performance thin-film transistors (TFTs) have been fabricated on a quartz substrate by the use of a laser-annealed multiple-strip-structure poly-Si film as a semiconductor. By recrystallization of a multiple-strip-structure poly-Si with CW-Ar laser, the carrier trap density of poly-Si can be reduced to obtain the preferential characteristics of a TFT. So, these poly-Si TFTs have n-channel enhancement-mode characteristics with threshold voltage as low as 0.4 V and large transconductance. Furthermore, a very large ON/OFF current ratio is obtained as eight orders of magnitude and the leakage current between the source and the drain is revealed to be as low as ~10 ^-13 A

Keywords

elemental semiconductors; laser beam annealing; leakage currents; silicon; thin film transistors; 0.4 V; 10^-13 A; Si-SiO₂; SiO₂; carrier trap density; laser recrystallisation; low leakage current; multichannel structure; multiple-strip-structure; n-channel enhancement-mode characteristics; on/off current ratio; polysilicon TFT; quartz substrate; threshold voltage; transconductance; Annealing; Grain boundaries; Laser modes; Leakage current; Power lasers; Semiconductor films; Semiconductor lasers; Silicon; Substrates; Thin film transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.7414

Filename

7414