On the use of Thornber´s augmented drift-diffusion equation for modeling GaAs devices

This brief examines the usefulness of Thornber´s augmented drift-diffusion equation (1982) for modeling submicrometer GaAs devices. A general methodology for assessing charge transport models is outlined, and a new method for calculating Thornber´s augmenting transport coefficients is described. A Monte Carlo simulation of electron transport in GaAs is then used to perform calculations that permit an assessment of the utility of Thornber´s equation. These results demonstrate significant problems in using Thornber´s equation to model submicrometer GaAs devices