• DocumentCode
    1468537
  • Title

    200 GHz pulsed GaAs-IMPATT diodes

  • Author

    Benz, C. ; Freyer, J.

  • Author_Institution
    Tech. Univ. Munchen, Germany
  • Volume
    34
  • Issue
    24
  • fYear
    1998
  • fDate
    11/26/1998 12:00:00 AM
  • Firstpage
    2351
  • Lastpage
    2353
  • Abstract
    GaAs double-drift Read IMPATT diodes for pulsed operation are designed for very high current densities (175 kA/cm2) at frequencies up to 200 GHz. The active devices are developed by using Monte-Carlo simulations in addition to a large-signal drift-diffusion model. RF output powers of 1 W at 176.5 GHz and 0.3 W at 198 GHz are realised
  • Keywords
    III-V semiconductors; IMPATT diodes; Monte Carlo methods; current density; gallium arsenide; millimetre wave diodes; semiconductor device models; 0.3 W; 1 W; 176.5 GHz; 198 GHz; GaAs; III-V semiconductors; Monte-Carlo simulations; RF output powers; current densities; double-drift Read IMPATT diodes; large-signal drift-diffusion model; pulsed IMPATT diodes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19981628
  • Filename
    743044
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1468537