Low frequency noise and screening effects in AlGaN/GaN HEMTs

Author

Garrido, J.A. ; Calle, F. ; Munoz, Eugenio ; Izpura, I. ; Sánchez-Rojas, J.L. ; Li, R. ; Wang, K.L.

Author_Institution

Dept. de Ingenieria Electron., ETSI Telecommun., Madrid, Spain

Volume

34

Issue

24

fYear

1998

fDate

11/26/1998 12:00:00 AM

Firstpage

2357

Lastpage

2359

Abstract

Low frequency noise has been studied in Al_0.15Ga_0.85N/GaN high electron mobility transistors grown on sapphire substrates by metal organic vapour phase epitaxy. A strong dependence between the Hooge parameter α_H and V_GS, was found. A Hooge parameter as low as 5×10^-4 was obtained at V_GS=0 V. Mobility fluctuations produced by changes in the rate of trapping charge at dislocations are suggested to be the dominant 1/f noise mechanism, although screening effects by the channel electrons significantly reduce their effect on the 1/f noise properties

Keywords

1/f noise; III-V semiconductors; aluminium compounds; electron mobility; electron traps; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; semiconductor device noise; shielding; vapour phase epitaxial growth; 1/f noise mechanism; Al_0.15Ga_0.85N-GaN; HEMTs; Hooge parameter; channel electrons; dislocation charge trapping; low frequency noise; metal organic vapour phase epitaxy; mobility fluctuations; screening effects;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19981597

Filename

743048