Transformer coupled stacked FET power amplifiers

Author

McRory, John G. ; Rabjohn, Gordon G. ; Johnston, Ronald H.

Author_Institution

TRLabs, Calgary, Alta., Canada

Volume

34

Issue

2

fYear

1999

fDate

2/1/1999 12:00:00 AM

Firstpage

157

Lastpage

161

Abstract

The development of high-power linear ultrahigh-frequency amplifiers is made difficult by the low impedance of the devices used in the output stage, which causes matching difficulties and high radio-frequency current levels. A stacked field-effect transistor (FET) configuration is shown to reduce these problems with its increased output impedance and lower current required for a given output power. A linear analysis of the stacked FET configuration is given. Two class A monolithic microwave integrated circuit amplifiers are developed and subjected to one- and two-tone tests to demonstrate the performance of the stacked FET as a power amplifier at 900 MHz

Keywords

MESFET integrated circuits; MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; field effect MMIC; impedance matching; integrated circuit design; linear network analysis; 900 MHz; MESFET model; class A MMIC amplifiers; high-power UHF amplifiers; linear UHF amplifiers; linear analysis; monolithic microwave integrated circuit; one-tone tests; output impedance; stacked FET power amplifiers; stacked field-effect transistor configuration; transformer coupled power amplifiers; two-tone tests; ultrahigh-frequency amplifiers; Circuit testing; FET integrated circuits; High power amplifiers; Impedance; Microwave FETs; Microwave amplifiers; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.743760

Filename

743760