5-Gb/s XOR optical gate based on cross-polarization modulation in semiconductor optical amplifiers

Author

Soto, H. ; Erasme, D. ; Guekos, G.

Author_Institution

Fisica Aplicad, CICISE, Baja California, Mexico

Volume

13

Issue

4

fYear

2001

fDate

4/1/2001 12:00:00 AM

Firstpage

335

Lastpage

337

Abstract

We demonstrate a new design for a XOR optical gate operating in the GHz regime using the cross-polarization modulation effect in a semiconductor optical amplifier. Dynamic and optically controlled polarization rotation in the devices is used to control the output power of the device. Static extinction ratio of the order of 20 dB can be obtained. Bit rate doubling at rate of 1.2 and 2.5 Gb/s have been demonstrated.

Keywords

electro-optical modulation; light polarisation; optical design techniques; optical logic; optical rotation; phase modulation; semiconductor optical amplifiers; 1.2 Gbit/s; 2.5 Gbit/s; GHz regime; Gb/s XOR optical gate; bit rate doubling; cross-polarization modulation; cross-polarization modulation effect; optically controlled polarization rotation; output power; semiconductor optical amplifiers; static extinction ratio; Extinction ratio; Optical control; Optical design; Optical devices; Optical modulation; Optical polarization; Power amplifiers; Power generation; Semiconductor optical amplifiers; Stimulated emission;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.917843

Filename

917843