DocumentCode
1469814
Title
Tripping Characteristics of Residual Current Devices Under Nonsinusoidal Currents
Author
Luo, Xiang ; Du, Y. ; Wang, X.H. ; Chen, M.L.
Author_Institution
Shanghai Jiao Tong Univ., Shanghai, China
Volume
47
Issue
3
fYear
2011
Firstpage
1515
Lastpage
1521
Abstract
This paper presents an experimental investigation into the operating characteristics of residual current devices (RCDs) under an unbalanced current. The unbalanced current included the harmonic current, ground fault current, and surge current. A testing system was first set up in the laboratory, and the minimum values of the current causing RCD samples to trip were recorded. To obtain consistent testing results, RCD samples under test were demagnetized prior to each test. It is found that RCD tripping is primarily determined by the peak value of the unbalanced current. Under a ground fault, RCDs installed in healthy circuits may trip. It would be necessary to limit the maximum leakage current in the circuits to avoid such nuisance tripping. Under surge conditions, RCDs could withstand a large short-duration current. However, a long-duration surge current can easily cause RCDs to trip.
Keywords
fault currents; leakage currents; residual current devices; RCD; ground fault current; harmonic current; long-duration surge current; maximum leakage current; nonsinusoidal currents; residual current devices; short-duration current; surge current; testing system; tripping characteristics; unbalanced current; Buildings; Circuit faults; Fault currents; Harmonic analysis; Leakage current; Magnetic cores; Surges; Harmonic current; nuisance tripping; residual current device; surge and fault current;
fLanguage
English
Journal_Title
Industry Applications, IEEE Transactions on
Publisher
ieee
ISSN
0093-9994
Type
jour
DOI
10.1109/TIA.2011.2125939
Filename
5729328
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