• DocumentCode
    1469863
  • Title

    Double epitaxy improves single-photon avalanche diode performance

  • Author

    Lacaita, Andrea ; Ghioni, Massimo ; Cova, S.

  • Author_Institution
    Dipartimento di Elettronica, Politecnico di Milano, Italy
  • Volume
    25
  • Issue
    13
  • fYear
    1989
  • fDate
    6/22/1989 12:00:00 AM
  • Firstpage
    841
  • Lastpage
    843
  • Abstract
    A new single-proton avalanche diode (SPAD) with double-epitaxial silicon structure is presented. The device has a time response with short diffusion tail (270 ps time-constant), high resolution (45 ps FWHM, full-width at half maximum of the peak) and low noise, i.e. low-dark-count rate.
  • Keywords
    avalanche photodiodes; elemental semiconductors; silicon; 270 ps; 45 ps; SPAD; double epitaxial Si structure; high resolution; low noise; low-dark-count rate; semiconductors; short diffusion tail; single-photon avalanche diode performance; time response;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890567
  • Filename
    91794
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1469863