Fast tuning of 3.3 μm InAsSb-InAsSbP diode lasers using nonlinear optical effects

Author

Danilova, A.P. ; Imenkov, A.N. ; Danilova, T.N. ; Kolchanova, N.M. ; Stepanov, M.V. ; Sherstnev, V.V. ; Kovlev, Yu P Ya

Author_Institution

Ioffe Physico-Tech. Inst., St. Petersburg, Russia

Volume

145

Issue

5

fYear

1998

fDate

10/1/1998 12:00:00 AM

Firstpage

261

Lastpage

264

Abstract

InAsSb-InAsSbP double heterostructures diode lasers for the spectral region 3.3 μm grown by liquid phase epitaxy have been investigated. Emission spectra, far-field patterns and wavelength tuning have been studied over a wide current range from threshold value I_th up to 3I_th at the temperature of liquid nitrogen. Current-controlled wavelength tuning has been obtained both towards shorter wavelengths (to 4.56 cm^-1) and towards longer wavelengths (up to 0.9 cm^-1) at a temperature T=77 K, at lasing generation that maintains single mode. Comparison of the emission properties of lasers driven by different types of current (short pulse current, sawtooth pulse current and quasi-CW regime) showed the same quantum-mechanical nature of current tuning. A theoretical model of this nonlinear optical phenomenon is proposed. The estimated times of current tuning, defined mainly by the photon lifetime in the cavity, are about 10^-9-10^-12 s

Keywords

III-V semiconductors; indium compounds; infrared sources; laser modes; laser theory; laser transitions; laser tuning; liquid phase epitaxial growth; optical fabrication; semiconductor device models; semiconductor lasers; 3.3 mum; 77 K; InAsSb-InAsSbP; InAsSb-InAsSbP diode lasers; InAsSb-InAsSbP double heterostructures diode lasers; current-controlled wavelength tuning; emission properties; emission spectra; far-field patterns; fast laser tuning; liquid phase epitaxy; nonlinear optical effects; nonlinear optical phenomenon; photon lifetime; quantum-mechanical nature; quasi-CW regime; sawtooth pulse current; short pulse current; single mode; spectral region; threshold value; wavelength tuning; wide current range;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:19982306

Filename

744057