Optimization of QHE-devices for metrological applications

Author

Jeckelmann, Beat ; Rüfenacht, Alain ; Jeanneret, Blaise ; Overney, Frédéric ; Pierz, Klaus ; Von Campenhausen, Aurel ; Hein, Günter

Author_Institution

Swiss Federal Office of Metrol., Bern-Wabern, Switzerland

Volume

50

Issue

2

fYear

2001

fDate

4/1/2001 12:00:00 AM

Firstpage

218

Lastpage

222

Abstract

In the framework of an European project aiming at the realization of a system for the calibration of capacitance standards based on the quantum Hall effect (QHE), optimized QHE devices for the metrological application as dc as well as ac standards of resistance are developed. The present paper describes the dc characterization of a large number of devices with different layouts, contact configurations, carrier concentrations, and mobilities. The results demonstrate the influence of the device parameters on the critical current, the width of the quantized plateaus, the longitudinal voltages along the device and the quantized Hall resistance. Recommendations are given for the layout and mobility of QHE devices in view of their use as dc standards of resistance

Keywords

III-V semiconductors; aluminium compounds; calibration; carrier density; electric resistance measurement; gallium arsenide; measurement standards; quantum Hall effect; semiconductor heterojunctions; European project; GaAs-AlGaAs; GaAs/AlGaAs; QHE-devices; ac standards; calibration; capacitance standards; carrier concentration; carrier mobilities; critical current; dc standards; longitudinal voltages; quantized Hall resistance; quantized plateaus; quantum Hall effect; resistance standards; Bridge circuits; Calibration; Electrical resistance measurement; Electrons; Geometry; Hall effect; Metrology; Resistors; Standards development; Voltage;

fLanguage

English

Journal_Title

Instrumentation and Measurement, IEEE Transactions on

Publisher

ieee

ISSN

0018-9456

Type

jour

DOI

10.1109/19.918106

Filename

918106