• DocumentCode
    1471690
  • Title

    Gate-induced drain leakage current enhanced by plasma charging damage

  • Author

    Ma, Siguang ; Zhang, Yaohui ; Li, M.-F. ; Weidan Li ; Xie, Joseph ; Sheng, George T T ; Yen, Andrew C. ; Wang, John L F

  • Author_Institution
    Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore
  • Volume
    48
  • Issue
    5
  • fYear
    2001
  • fDate
    5/1/2001 12:00:00 AM
  • Firstpage
    1006
  • Lastpage
    1008
  • Abstract
    Correlation between gate-induced drain leakage (GIDL) current I GIDL and plasma charging damage is investigated for p-MOSFETs. IGIDL and maximum charge pumping current show the same trend as a function of antenna area ratio (AAR) and cell location. Enhancement of IGIDL is mainly attributed to the increase of Si/SiO2 interface traps generated in the plasma processes and is not related to the small amount of trapped charge in the oxide
  • Keywords
    MOSFET; interface states; leakage currents; plasma materials processing; sputter etching; 5 nm; GIDL current enhancement; Si-SiO2; Si/SiO2 interface traps; antenna area ratio; cell location; gate-induced drain leakage current; maximum charge pumping current; pMOSFETs; plasma charging damage; plasma processes; Charge pumps; Current measurement; Degradation; Leakage current; MOSFET circuits; Plasma devices; Plasma materials processing; Plasma sources; Stress; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.918252
  • Filename
    918252
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1471690