DocumentCode
1472171
Title
Radio-Frequency Study of Dopant-Segregated n-Type SB-MOSFETs on Thin-Body SOI
Author
Urban, Christoph ; Emam, Mostafa ; Sandow, Christian ; Knoch, Joachim ; Zhao, Qing-Tai ; Raskin, Jean-Pierre ; Mantl, Siegfried
Author_Institution
Inst. of Bio- & Nanosyst. 1, Julich, Germany
Volume
31
Issue
6
fYear
2010
fDate
6/1/2010 12:00:00 AM
Firstpage
537
Lastpage
539
Abstract
We present a detailed direct current and radiofrequency study of fully depleted dopant-segregated Schottky barrier (SB) MOSFETs on thin-body Silicon-on-Insulator. On-wafer scattering-parameter measurements of n-type NiSi source/drain SB-MOSFETs provide an in-depth understanding of key device parameters (transconductances and capacitances) as a function of the implanted arsenic dose, i.e., different SB height. Devices with 80-nm-channel length show a high ON current of 1150 mA/mm and exhibit a unity-gain cutoff frequency of fT = 140 GHz.
Keywords
MOSFET; S-parameters; Schottky barriers; silicon-on-insulator; NiSi; dopant-segregated Schottky barrier MOSFET; frequency 140 GHz; n-type MOSFET; radio-frequency study; size 80 nm; thin-body SOI; Dopant segregation (DS); MOSFET; NiSi; Schottky barrier (SB); radio frequency (RF); scattering-parameters (S-parameters);
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2010.2045220
Filename
5447656
Link To Document