Fabrication and Characterization of an Epitaxial Graphene Nanoribbon-Based Field-Effect Transistor

Author

Meng, Nan ; Fernandez, J. Ferrer ; Vignaud, Dominique ; Dambrine, Gilles ; Happy, Henri

Author_Institution

Inst. of Electron., Microelectron. & Nanotechnol., Villeneuve d´´Ascq, France

Volume

58

Issue

6

fYear

2011

fDate

6/1/2011 12:00:00 AM

Firstpage

1594

Lastpage

1596

Abstract

The static and dynamic characteristics of top-gated graphene nanoribbon-based field-effect transistors were investigated. Multilayer graphene was synthesized by thermal decomposition of Si-face silicon carbide. The impact of the number of graphene layers on device performance was explored. It was found that, with the reduction of the layer number from ten to five, a significant improvement of direct-current characteristics and high-frequency performance can be observed. A high intrinsic current-gain cutoff frequency of 60 GHz and a maximum oscillation frequency of 28 GHz are reported.

Keywords

epitaxial layers; field effect transistors; graphene; multilayers; nanoelectronics; nanofabrication; nanostructured materials; pyrolysis; C; SiC; device performance; direct-current characteristics; dynamic characteristics; epitaxial graphene nanoribbon-based field-effect transistor; graphene layers; high-frequency performance; intrinsic current-gain cutoff frequency; maximum oscillation frequency; multilayer graphene; static characteristics; thermal decomposition; Atomic layer deposition; Atomic measurements; Cutoff frequency; Epitaxial growth; Logic gates; Performance evaluation; Transistors; Graphene; high-frequency (HF) characterization; ribbon; transistor;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2011.2119486

Filename

5732677