• DocumentCode
    1473812
  • Title

    A Si BiCMOS transimpedance amplifier for 10-Gb/s SONET receiver

  • Author

    Kim, Helen H. ; Chandrasekhar, S. ; Burrus, Charles A., Jr. ; Bauman, Jon

  • Author_Institution
    Lucent Technol. Bell Labs., Holmdel, NJ, USA
  • Volume
    36
  • Issue
    5
  • fYear
    2001
  • fDate
    5/1/2001 12:00:00 AM
  • Firstpage
    769
  • Lastpage
    776
  • Abstract
    A transimpedance amplifier packaged with an InP p-i-n photodiode has been demonstrated for 10-Gb/s SONET receiver. The shunt feedback transimpedance amplifier is fabricated in 0.25-μm modular Si BiCMOS technology. The transimpedance of 55 dBΩ is achieved at a bandwidth of 9 GHz by applying shunt peaking and filter termination at the input. The optical sensitivity of -17 dBm was measured at 10 Gb/s for a bit-error rate of 10-12
  • Keywords
    BiCMOS analogue integrated circuits; SONET; elemental semiconductors; feedback amplifiers; optical fibre communication; optical receivers; p-i-n photodiodes; silicon; 0.25 micron; 10 Gbit/s; 9 GHz; BiCMOS; SONET receiver; Si; bandwidth; bit-error rate; filter termination; optical sensitivity; p-i-n photodiode; shunt feedback transimpedance amplifier; shunt peaking; transimpedance amplifier; Bandwidth; BiCMOS integrated circuits; Indium phosphide; Optical amplifiers; Optical feedback; Optical filters; Optical receivers; PIN photodiodes; Packaging; SONET;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/4.918914
  • Filename
    918914
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1473812