Effect of Finger Pitch on the Driving Ability of a 40-nm MOSFET With Contact Etch Stop Layer Strain in Multifinger Gated Structure

Effects of the poly gate finger pitch on, hot-carrier-nduced reliability degradation, and radio frequency characteristics of the 40-nm n-channel metal-oxide-semiconductor field-effect transistors with contact-etch-stop-layer (CESL) strain and multifinger gate structures were systematically investigated by both experiment and technology computer-aided design simulation. The finger pitch influences both the transfer of CESL-induced stress into a channel and the shadow effect of a poly gate on a pocket implantation. The results showed that the effects of the poly gate finger pitch were more obvious for pitches less than 0.12 . Additionally, the change in stress on the channel was dominant for pitches larger than 0.12 , but for pitches less than 0.12 , the modulation of pocket implantation shadow effects became the main controlling factor.