• DocumentCode
    1475159
  • Title

    A Multi-Level and Multi-Band Class-D CMOS Power Amplifier for the LINC System in the Cognitive Radio Application

  • Author

    Hur, Joonhoi ; Lee, Ockgoo ; Lee, Chang-Ho ; Lim, Kyutae ; Laskar, Joy

  • Author_Institution
    Georgia Electron. Design Center, Georgia Inst. of Technol., Atlanta, GA, USA
  • Volume
    20
  • Issue
    6
  • fYear
    2010
  • fDate
    6/1/2010 12:00:00 AM
  • Firstpage
    352
  • Lastpage
    354
  • Abstract
    In this letter, a multi-level and multi-band Class-D CMOS power amplifier (PA) in a standard 0.18 ??m CMOS process is presented. Using multiple PMOS devices with control switches, the proposed PA improves efficiency with the multi-level operation. In order to enable the multi-band operation, the proposed PA employs a tunable series resonator. The measured maximum drain efficiencies were 72% and 70% for the low power mode and high power mode, respectively. The 3 dB bandwidth of the proposed system was from 450 MHz to 730 MHz, which covers the cognitive radio white spectrum standard. The measured EVM using a commercial 16QAM OFDM signal was -34 dB with a LINC system.
  • Keywords
    CMOS integrated circuits; OFDM modulation; UHF power amplifiers; cognitive radio; quadrature amplitude modulation; resonators; 16QAM OFDM signal; LINC system; bandwidth 450 MHz to 730 MHz; cognitive radio; multiband class D CMOS power amplifier; multilevel class D CMOS power amplifier; multiple PMOS devices; tunable series resonator; CMOS; Class-D PA; LINC; discrete power control; power amplifier (PA);
  • fLanguage
    English
  • Journal_Title
    Microwave and Wireless Components Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1531-1309
  • Type

    jour

  • DOI
    10.1109/LMWC.2010.2047532
  • Filename
    5451155