XA readout chip characteristics and CdZnTe spectral measurements

Author

Barbier, L.M. ; Birsa, F. ; Odom, J. ; Barthelmy, S.D. ; Gehrels, N. ; Krizmanic, J.F. ; Palmer, D. ; Parsons, A.M. ; Stahle, C.M. ; Tueller, J.

Author_Institution

NASA Goddard Space Flight Center, Greenbelt, MD, USA

Volume

46

Issue

1

fYear

1999

fDate

2/1/1999 12:00:00 AM

Firstpage

7

Lastpage

18

Abstract

The authors report on the performance of a CdZnTe (CZT) array readout by an XA (X-ray imaging chip produced at the AMS foundry) application specific readout chip (ASIC). The array was designed and fabricated at NASA/Goddard Space Flight Center (GSFC) as a prototype for the Burst Arc-Second Imaging and Spectroscopy gamma-ray instrument. The XA ASIC was obtained from Integrated Detector and Electronics (IDE), in Norway. Performance characteristics and spectral data for ²⁴¹Am are presented both at room temperature and at -20°C. The measured noise (σ) was 2.5 keV at 60 keV at room temperature. This paper represents a progress report on work with the XA ASIC and CZT detectors. Work is continuing and in particular, larger arrays are planned for future NASA missions

Keywords

II-VI semiconductors; X-ray detection; application specific integrated circuits; cadmium compounds; gamma-ray detection; semiconductor counters; zinc compounds; ASIC; Burst Arc-Second Imaging and Spectroscopy gamma-ray instrument; CdZnTe; CdZnTe spectral measurements; XA readout chip characteristics; application specific readout chip; Application specific integrated circuits; Detectors; Foundries; NASA; Optical imaging; Prototypes; Semiconductor device measurement; Spectroscopy; Temperature; X-ray imaging;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.747762

Filename

747762