DocumentCode
1476109
Title
Growth, Emission and Scintillation Properties of Tb-Sc Doped LuAG Epitaxial Films
Author
Kucera, M. ; Nikl, M. ; Hanus, M. ; Onderisinova, Z. ; Beitlerova, A.
Author_Institution
Fac. of Math. & Phys., Charles Univ., Prague, Czech Republic
Volume
59
Issue
5
fYear
2012
Firstpage
2275
Lastpage
2280
Abstract
Epitaxial garnet films of Sc3+ and Tb3+ co-doped lutetium aluminum garnet (LuAG) were grown by the isothermal liquid phase epitaxy. Due to the Sc co-doping, an increase of Tb-related radioluminescence and photoluminescence intensities was observed. The photoluminescence of 5D4(Tb3+) emission shows one exponential decay with τ ~ 3 ms. The decay time virtually does not depend on doping for examined concentrations of Tb and Sc ions up to 0.45 and 1.35 atoms per formula unit, respectively, and any concentration quenching was not observed in studied samples. The Sc co-doping represents an appropriate approach for improving emission properties of rare-earth doped aluminum garnets.
Keywords
aluminium compounds; doping profiles; epitaxial layers; liquid phase deposition; photoluminescence; radiation quenching; radiochemistry; scandium; terbium; Al5Lu3O12:Tb,Sc; codoping concentration; concentration quenching; emission properties; epitaxial garnet films; exponential decay time; isothermal liquid phase epitaxy; photoluminescence emission; radioluminescence; rare-earth doped aluminum garnets; scintillation properties; Absorption; Doping; Energy exchange; Epitaxial growth; Garnets; Ions; Photoluminescence; Garnet; LuAG:TbSc; liquid phase epitaxy; luminescence; scintillator;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2012.2187930
Filename
6172631
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