• DocumentCode
    1476109
  • Title

    Growth, Emission and Scintillation Properties of Tb-Sc Doped LuAG Epitaxial Films

  • Author

    Kucera, M. ; Nikl, M. ; Hanus, M. ; Onderisinova, Z. ; Beitlerova, A.

  • Author_Institution
    Fac. of Math. & Phys., Charles Univ., Prague, Czech Republic
  • Volume
    59
  • Issue
    5
  • fYear
    2012
  • Firstpage
    2275
  • Lastpage
    2280
  • Abstract
    Epitaxial garnet films of Sc3+ and Tb3+ co-doped lutetium aluminum garnet (LuAG) were grown by the isothermal liquid phase epitaxy. Due to the Sc co-doping, an increase of Tb-related radioluminescence and photoluminescence intensities was observed. The photoluminescence of 5D4(Tb3+) emission shows one exponential decay with τ ~ 3 ms. The decay time virtually does not depend on doping for examined concentrations of Tb and Sc ions up to 0.45 and 1.35 atoms per formula unit, respectively, and any concentration quenching was not observed in studied samples. The Sc co-doping represents an appropriate approach for improving emission properties of rare-earth doped aluminum garnets.
  • Keywords
    aluminium compounds; doping profiles; epitaxial layers; liquid phase deposition; photoluminescence; radiation quenching; radiochemistry; scandium; terbium; Al5Lu3O12:Tb,Sc; codoping concentration; concentration quenching; emission properties; epitaxial garnet films; exponential decay time; isothermal liquid phase epitaxy; photoluminescence emission; radioluminescence; rare-earth doped aluminum garnets; scintillation properties; Absorption; Doping; Energy exchange; Epitaxial growth; Garnets; Ions; Photoluminescence; Garnet; LuAG:TbSc; liquid phase epitaxy; luminescence; scintillator;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2012.2187930
  • Filename
    6172631