Gunn-effect pulse and logic devices

Further developments of high-frequency pulse and logic elements employing semiconductor bulk-effect devices are presented. Regeneration gain of high values has been achieved. The effects of circuit and device parameters have been investigated. Experimental and theoretical results are presented on a wide range of logic gates `Exclusive OR¿, `Inclusive OR¿, `AND¿ and `Inhibitor¿. Designs for three more basic gates, namely, the `Inverter¿, `NOR¿ and `NAND¿ are proposed. Further experimental results on highspeed transformation of analogue information into pulses are presented. A storage loop employing two Gunn devices has been developed.