• DocumentCode
    1477315
  • Title

    Low threshold current laser emitting at 637 nm

  • Author

    Welch, D.F. ; Wang, Tao ; Scifres, D.R.

  • Author_Institution
    Spectra Diode Labs., San Jose, CA, USA
  • Volume
    27
  • Issue
    9
  • fYear
    1991
  • fDate
    4/25/1991 12:00:00 AM
  • Firstpage
    693
  • Lastpage
    695
  • Abstract
    Visible laser diodes operating at 637 nm have been fabricated with tensile strained GaInP multiple quantum well active regions. The threshold current of these lasers are as low as 1.2 kA/cm2. The output from the strained active region is TM polarised.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; semiconductor junction lasers; 637 nm; TM polarised; low-threshold current laser; semiconductors; strained active region; tensile strained GaInP multiple quantum well active regions; threshold current; visible laser diodes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910432
  • Filename
    74865
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1477315