• DocumentCode
    1477441
  • Title

    Electron mobilities in MOS channels formed along anisotropically dry etched [110] silicon trench sidewalls

  • Author

    Shenai, Krishna

  • Author_Institution
    Gen. Electr. Corp. Res. & Dev. Center, Schenectady, NY, USA
  • Volume
    27
  • Issue
    9
  • fYear
    1991
  • fDate
    4/25/1991 12:00:00 AM
  • Firstpage
    715
  • Lastpage
    717
  • Abstract
    Experimental silicon trench MOSFET structures were fabricated and used to estimate electron mobilities in MOS channels formed along [110] trench sidewalls. A channel electron mobility approaching 87% of its bulk value can be obtained. These results were derived from a novel trench fabrication process, measured MOSFET drain current-voltage characteristics and accurate two-dimensional device simulations of MOSFET transfer characteristics.
  • Keywords
    carrier mobility; insulated gate field effect transistors; semiconductor technology; MOS channels; MOSFET transfer characteristics; Si trench sidewalls; [110] trench sidewalls; anisotropically dry etched; channel electron mobility; electron mobilities estimation; measured MOSFET drain current-voltage characteristics; trench MOSFET structures; trench fabrication process; two-dimensional device simulations;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910445
  • Filename
    74878
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1477441