Fast in-situ diode detector characterization for Six-Port interferometer receivers

Six-Port receivers require a precise power measurement of all their four output channels. However, due to temperature drift, fabrication and component tolerances detectors´ performance may have some degradation, which limits the measurement accuracy. Thus, an in-situ detector characterization is necessary. In this paper, a fast and simple solution for estimating the diode detector´s characteristics is presented, which is ideal for Six-Port diode power detectors. This method is fast and can be easily implemented on a microcontroller.